(Invited) Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
نویسندگان
چکیده
منابع مشابه
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining IIInitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,...
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2013
ISSN: 1938-6737,1938-5862
DOI: 10.1149/05810.0289ecst